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  Datasheet File OCR Text:
 Ordering number : ENN7492
FTS2028
N-Channel Silicon MOSFET
FTS2028
DC / DC Converter Applications
Features
* * * *
Package Dimensions
unit : mm 2147A
[FTS2028]
0.65
8
5
0.5 4.5 6.4
0.95
Low ON-resistance. 4V drive. Mounting height 1.1mm. Ultrahigh-speed switching.
3.0
0.425
1
0.25
4
(0.95)
1 : Drain 2 : Source 3 : Source 0.125 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings 30 20 6 25 1.3 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A Ratings min 30 1 10 1.0 6.3 9 2.4 typ max Unit V A A V S
Marking : S2028
0.1
1.0
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33004 TS IM TA-2612 No.7492-1/4
FTS2028
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=6A, VGS=10V ID=4A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A IS=6A, VGS=0 Ratings min typ 24 37 530 170 90 9 110 41 58 10 1.5 1.0 0.8 1.2 max 32 52 Unit m m pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD=15V 10V 0V VIN ID=6A RL=2.5 VIN PW=10s D.C.1%
D
VOUT
G
P.G
50
S
FTS2028
6.0V
6
ID -- VDS
4.5V 3.5 V
8.0V
3.0 V
6
ID -- VGS
VDS=10V
5
5
Drain Current, ID -- A
4
Drain Current, ID -- A
10.0V
4
3
3
C
2
2
Ta=75
0 0.5 1.0 1.5 2.0
1
1
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.5 3.0 3.5 4.0
Drain-to-Source Voltage, VDS -- V
60
IT06124 60
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
25C
--25C
VGS=2.5V
IT06125
RDS(on) -- Ta
Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
55 50 45 40 35 30 25 20 15 0 2 4 6 8 10 12 14 16
50
40
ID=4A
6A
4. I D=
5
G A, V
4V S=
30
0.0A I D=1
=6V , VGS
20
10
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
IT06126
Ambient Temperature, Ta -- C
IT06127
No.7492-2/4
FTS2028
Forward Transfer Admittance, yfs -- S
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 3 5 7
yfs -- ID
VDS=10V
10 7 5 3 2
IF -- VF
VGS=0
Forward Current, IF -- A
25C
0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4
1.0
Drain Current, ID -- A
3 2
10 IT06128
0.001 0.2
0.5
0.6
75C
0.7 0.8
C --25 Ta= 75C
Ta= --25 C 25C
1.0 7 5 3 2
0.9
1.0
1.1
1.2
SW Time -- ID
VDD=15V VGS=10V Ciss, Coss, Crss -- pF
td(off)
1000 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VF -- V
IT06129
Ciss
Switching Time, SW Time -- ns
100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 10 2 3 5 7 1.0 2 3 5
tf
tr
Coss
Crss
100 7 5 3
td(on)
Drain Current, ID -- A
10 9
10 IT06130 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
7
0
5
10
15
20
25
30 IT06131
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=6A Drain Current, ID -- A
IDP=25A ID=6A
10
<10s 1m 100s s
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
10
ms
DC
0m
s
op
er
ati
on
Operation in this area is limited by RDS(on).
0.01 0.01
Ta=25C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23
Total Gate Charge, Qg -- nC
1.5
IT06132
PD -- Ta
Drain-to-Source Voltage, VDS -- V
5 7 100 IT06133
Allowable Power Dissipation, PD -- W
1.3
M
1.0
ou
nte
do
na
ce
ram
ic
bo
ard
(1
00
0.5
0m
m2 !0
.8m
m)
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT06134
No.7492-3/4
FTS2028
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice.
PS No.7492-4/4


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